application high speed power switching features ?low on?esistance high speed switching low drive current 4 v gate drive device can be driven from 5 v source suitable for switching regulator, dc ?dc converter avalanche ratings 1 2, 4 3 ldpak 3 2 1 4 3 2 1 4 1. gate 2. drain 3. source 4. drain table 1 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss ?0 v gate to source voltage v gss ?0 v drain current i d ?0 a drain peak current i d(pulse) * ?20 a body?rain diode reverse drain current i dr ?0 a avalanche current i ap *** ?0 a avalanche energy e ar *** 77 mj channel dissipation pch** 75 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? * pw 10 ?, duty cycle 1 % ** value at tc = 25 ? *** value at tch = 25 ?, rg 50 ? 2sj280 l , 2sj280 s silicon p channel mos fet
table 2 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown v (br)dss ?0 v i d = ?0 ma, v gs = 0 voltage gate to source breakdown v (br)gss ?0 v i g = ?00 ?, v ds = 0 voltage gate to source leak current i gss ?0 ? v gs = ?6 v, v ds = 0 zero gate voltage drain current i dss ?50 ? v ds = ?0 v, v gs = 0 gate to source cutoff voltage v gs(off) ?.0 ?.25 v i d = ? ma, v ds = ?0 v static drain to source on state r ds(on) 0.033 0.043 ? i d = ?5 a resistance v gs = ?0 v * 0.045 0.06 ? i d = ?5 a v gs = ? v * forward transfer admittance |y fs | 1725 si d = ?5 a v ds = ?0 v * input capacitance ciss 3300 pf v ds = 10 v output capacitance coss 1500 pf v gs = 0 reverse transfer capacitance crss 480 pf f = 1 mhz turn?n delay time t d(on) 30 ns i d = ?5 a rise time t r 170 ns v gs = ?0 v turn?ff delay time t d(off) 500 ns r l = 2 ? fall time t f 390 ns body?rain diode forward v df ?.5 v i f = ?0 a, v gs = 0 voltage body?rain diode reverse t rr 200 ns i f = ?0 a, v gs = 0, recovery time dif / dt = 50 a / ? * pulse test 2sj280 l , 2sj280 s
case temperature tc (?) power vs. temperature derating channel dissipation pch (w) 0 25 50 75 50 100 150 maximum safe operation area ?00 ?00 ?00 ?0 ?0 ? ? ?.5 ?.1 ?.3 ? ? ?0 ?0 ?00 drain to source voltage v (v) drain current i (a) d ds operation in this area is limited by r ds(on) 1 ms 10 s 100 s pw = 10 ms dc operation (tc = 25?) ta = 25? ? typical output characteristics ?0 ?0 ?0 ?0 ?0 0 0 4 6 8 ?0 drain to source voltage v (v) drain current i (a) d ds ? v ?.5 v ? v ?.5 v v = ? v ?0 v ? v gs typical transfer characteristics ?0 ?0 ?0 ?0 ?0 0 ? ? ? ? ? gate to source voltage v (v) drain current i (a) d gs tc = 25? 75? pulse test v = ?0 v gs ?5? 2sj280 l , 2sj280 s
drain-source saturation voltage vs. gate-source voltage 0 2 4 6 8 10 ?.4 ?.8 ?.2 ?.6 ?.0 gate to source voltage v (v) drain to source saturation voltage v (v) gs ds (on) pulse test ?0 a ?0 a i = ?0 a d static drain-source on state resistance vs. drain current ? ? ?0 ?0 ?0 ?00 ?00 0.005 0.01 0.02 0.05 0.1 0.2 0.5 drain current i (a) static drain-source on state resistance r ( ) ds(on) d ? ?0 v v = ? v gs static drain-source on state resistance vs. temperature case temperature t (?) c static drain-source on state resistance r ( ) ds(on) ? 0.1 0.08 0.06 0.04 0.02 ?0 0 40 80 120 160 pulse test ?0 v i = ?0 a d v = ? v gs i = ?0 a d ?0 a, ?0 a ?0 a, ?0 a 0 forward transfer admittance vs. drain current 100 50 20 10 5 2 1 ?.5 ? ? ? ?0 ?0 ?0 drain current i (a) d forward transfer admittance |y | (s) fs tc = 25? ?5? pulse test v = ?0 v ds 75? 2sj280 l , 2sj280 s
body-drain diode reverse recovery time reverse drain current i (a) dr reverse recovery time t (ns) rr ? ? ? ?0 ?0 ?0 ?00 5 10 20 50 100 200 500 di/dt = 50 a/ s, v = 0 ta = 25? gs typical capacitance vs. drain-source voltage 10000 1000 100 10 0 ?0 ?0 ?0 ?0 ?0 drain to source voltage v (v) ds capacitance c (pf) ciss coss crss v = 0, f = 1 mhz gs dynamic input characteristics 0 ?0 ?0 ?0 ?0 ?00 0 40 80 120 160 200 0 ? ? ?2 ?6 ?0 gate charge qg (nc) drain to source voltage v (v) ds v = ?0 v ?5 v ?0 v dd ?5 v ?0 v v = ?0 v dd v i = ?0 a ds d gate to source voltage v (v) gs v gs switching characteristics drain current i (a) d ?.5 ? ? ? ?0 ?0 ?0 10 20 50 100 200 500 1000 switching time t (ns) t t (off) gs dd t (on) t < = = : v = ?0 v, v ?0 v pw = 2 s, duty 1% d d f r 2sj280 l , 2sj280 s
reverse drain current vs. source to drain voltage ?0 ?0 ?0 ?0 ?0 0 0 ?.4 ?.8 ?.2 ?.6 ?.0 source to drain voltage v (v) sd reverse drain current i (a) dr pulse test ? v 0, 5v v = ?0 v gs channel temperature tch (?) repetive avaranche energy e (mj) ar i = ?0 a v = ?5 v duty < 0.1% rg 50 dd ? ap > = maxmum avalanche energy vs. channel temperature derating 100 80 60 40 20 0 25 50 75 100 125 150 v monitor ds i monitor ap v dd rg vin ?5 v 50 d.u.t v dd 0 i d i ap v ds v (br)dss v dss ?v dd v dss e = ar 2 1 ?l ?i ap 2 l ? avalanche test circuit and waveform 2sj280 l , 2sj280 s
application high speed power switching features ?low on?esistance high speed switching low drive current 4 v gate drive device can be driven from 5 v source suitable for switching regulator, dc ?dc converter avalanche ratings to?20ab 1 2 3 1. gate 2. drain 3. source 1 2 3 table 1 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss ?0 v gate to source voltage v gss ?0 v drain current i d ?5 a drain peak current i d(pulse) * ?0 a body?rain diode reverse drain current i dr ?5 a avalanche current i ap *** ?5 a avalanche energy e ar *** 19 mj channel dissipation pch** 50 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? * pw 10 ?, duty cycle 1 % ** value at tc = 25 ? *** value at tch = 25 ?, rg 50 ? 2SJ290 silicon p-channel mos fet
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